TIE - Associate Editors


A. ABDELHAKIM
ABB Corp. Research, Sweden

A. ABDEL-KHALIK
Alexandria University, Egypt

L. AFONSO
University of Minho, Portugal

V. AMBROZIC
Univ. of Ljubljana, Slovenia

E. BABAEI
Univ. of Tabriz, Iran

S. BAYHAN
Hamad Bin Khalifa University, Qatar

D. BRUCKNER
B&R, Austria

C. BUCCELLA
Univ. of L’Aquila, Italy

G. BUTICCHI
Univ. of Nottingham, China

D. CAO
Univ. of Waterloo, Canada

R. CARDENAS
Univ. of Chile, Chile

A. CARDOSO
U. of Beira Int., Covilhã, Portugal

W. CHEN
Southeast University, China

X. CHEN
Shibaura Inst. of Tech., Japan

E. CHENG
Hong Kong Polytech. U., Hong Kong

S. CHOI
Mississippi State University, USA

L. DALESSANDRO
Schaffner Group, Switzerland

M. DALLA COSTA
Federal Univ. of Santa Maria, Brazil

P. DAS
State University of New York, USA

T. DRAGICEVIC
Aalborg University, Denmark

H. DU
University of Wollongong, Australia

D. DUJIC
Ecole P.F. Lausanne, Switzerland

S. DWIVEDI
Danfoss Power Electronics A/S, Denmark

O. ELLABBAN
Iberdrola, Qatar

F. FREIJEDO
Huawei Technologies Duesseldorf GmbH, Germany

Y. FUJIMOTO
Yokohama Nat. Univ., Japan

M. GALEA
University of Nottingham Ningbo, China

F. GAO
UT of Belfort-Montbéliard, France

Z. GAO
Northumbria Univ., U.K.

A. GARCES
Universidad Tecnologica de Pereira, Colombia

B. GEORGE
IIT Madras, India

K. GOPAKUMAR
Indian Inst. of Sci. Bangalore, India

G. GRANDI
Univ. of Bologna, Italy

Y. HE
China University of Geosciences, China

M. HILAIRET
University of Franche-Comté, France

Y. HU
University of Liverpool, U.K.

K. IDE
Yaskawa E. C., Kitakyushu, Japan

A. IQBAL
Qatar University, Qatar

A. IOINOVICI
Nanjing Univ. of Aeronautics, China

M. KARIMI
Mississippi State University, USA

S. KATSURA
Keio Univ., Kanagawa, Japan

S. KEERTHIPATI
IIT, Hyderabad, India

V. KHADKIKAR
Masdar Inst. of Sci. & Tech., UAE

H. KOMURCUGIL
Eastern Mediterranean Univ., Turkey

G. KONSTANTINOU
UNSW Sydney, Australia

A. KRINGS
FEV GmbH, Germany

A. KUPERMAN
Ben-Gurion Univ. of the Negev, Israel

S. T. W. KWONG
City Univ. of Hong Kong, Hong Kong

C. S. LAM
University of Macau, China

K. B. LEE
Ajou Univ., Korea

G. LEI
University of Technology Sydney, Australia

P. LEZANA
Universidad Técnica Federico Santa María, Chile

H. LI
Beijing Jiaotong Univ., China

H. LI
Northwestern Polytechnical Univ., China

S. LI
Southeast University, China

X. L. LI
Northwestern Polytechnical Univ., China

C. LIU
City Univ. of Hong Kong, Hong Kong

H. LIU
Univ. of Portsmouth, U.K.

Y. LIU
Beihang University, China

Y. LIU
Harbin Institute of Technology, China

O. LOPEZ
University of Vigo, Spain

D. LU
Univ. of Technology Sydney, Australia

Q. LU
Zhejiang University, China

X. LU
Temple University, USA

O. LUCIA
Univ. of Zaragoza, Spain

A. LUQUE
Univ. of Seville, Spain

M. MANIC
Virginia Commonwealth Univ., USA

F. MARIGNETTI
Univ. of Cassino, Italy

R. MASTROMAURO
Unive. of Florence, Italy

M. MENGONI
University of Bologna, Italy

M. MOLINAS
Norwegian University of S&T, Norway

J. NA
Kunming University of Science and Technology, China

R. OBOE
Univ. of Padova, Italy

R. M. PALHARES
Federal Univ. of Minas Gerais, Brazil

Y. J. PAN
Dalhousie University, Canada

K. B. PARK
ABB Corp. Research Center, Switzerland

M. PEREZ
U. T. Federico Santa Maria, Chile

S. RAHARDJA
Northwestern Polytechnical Univ., China

M. RAKOTONDRABE
Univ. Bourgogne Franche-Comté, France

C. RECH
Federal Univ. of Santa Maria, Brazil

B. REN
Texas Tech Univ., USA

X. RUAN
Nanjing Univ. of Aeronautics, China

M. SAEEDIFARD
Georgia Inst. of Tech., Atlanta, USA

F. SALMASI
Univ. of Toronto, Canada

A. SERPI
NEPSY srl, Italy

G. SERRA
Univ. of Bologna, Italy

J. SHAN
York University, Canada

J. SHE
Tokyo University of Technology, Japan

X. SHE
GE Global Research, USA

P. SIANO
Univ. of Salerno, Italy

Y. P. SIWAKOTI
Univ. of Tech. Sydney, Australia

J. SOLSONA
UNS-CONICET, B. Aires, Argentina

T. I. STRASSER
AIT Austrian Inst. of Technology, Austria

H. SURYAWANSHI
Visvesvaraya Nat. I. of Tech., India

K. F. TSANG
City Univ. of Hong Kong, Hong Kong

T. TSUJI
Saitama University, Japan

H. VAHEDI
Ossiaco Inc., Canada

S. VAZQUEZ
Univ. of Seville, Spain

D. VINNIKOV
Tallinn University of Technology, Estonia

F. WANG
Chinese Academy of Sciences, China

H. WANG
ShanghaiTech University, China

Y. WANG
Harbin Inst. of Tech., China

Z. WANG
Southeast University, China

C. WEN
Nanyang Tech. Univ., Singapore

L. WU
Harbin Institute of Technology, China

L. WU
Shanghai Electric Wind Power Group Co., Ltd, China

W. WU
Shanghai Maritime Univ., China

H. XIAO
Southeast University, China

W. XIAO
University of Sydney, Australia

D. XU
Harbin Inst. of Tech., China

W. XU
Huazhong Univ. of Sci. & Tech., China

T. YAMAGUCHI
Ricoh Company Ltd., Japan

Y. YANG
Aalborg University, Denmark

A. G. YEPES
University of Vigo, Spain

S. YIN
Harbin Inst. of Tech., China

Y. YUAN
Chinese Academy of Sciences, China

B. ZHANG
Univ. of South Carolina, USA

L. ZHANG
Nanyang Technological University, Singapore

P. ZHANG
Tsinghua University, China

X. ZHANG
Nanyang Technological University

Z. ZHANG
Technical Univ. of Denmark, Denmark

Z. ZHANG
Shandong University, China

Z. ZHANG
Tianjin Univ., China